Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 47, Issue 4, Pages 500-509Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2010.2100809
Keywords
Fine structure constant; photodetectors; quantum wells; semiconductor lasers
Categories
Funding
- Natural Science and Engineering Research Council
- Canada Research Chairs Program
- Canadian Institute for Advanced Research
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Optical absorption and emission via interband and intersubband transitions in a quantum well can be described by a quantized optical frequency conductance proportional to the fine structure constant. We present a compact physical model based on optical frequency admittance for the interaction of light with quantum wells in photodetectors and semiconductor lasers.
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