Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 46, Issue 8, Pages 1214-1220Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2010.2045104
Keywords
Efficiency droop; InGaN; light-emitting diodes; numerical simulation
Categories
Funding
- National Science Council (NSC) of Taiwan [NSC 96-2112-M-018-007-MY3]
Ask authors/readers for more resources
P-type doping in the last barrier is proposed to improve the efficiency droop of the blue InGaN light-emitting diodes (LEDs). The light-current curves, energy band diagrams, carrier concentrations, radiative recombination efficiency, and internal quantum efficiency of the blue LEDs under study are investigated. The simulation results show that the efficiency droop is significantly improved when the last undoped GaN barrier in a typical blue LED is replaced by a p-type GaN barrier. The simulation results suggest that the improvement in efficiency droop is mainly due to the decrease of electron current leakage and increase of hole injection efficiency.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available