Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 46, Issue 12, Pages 1827-1833Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2010.2047246
Keywords
Coupled quantum dots; quantum dot laser; quantum dot molecule; quantum dots
Categories
Funding
- Defense Advanced Research Projects Agency [433 143-874a]
- National Science Foundation [08-21 979]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0821979] Funding Source: National Science Foundation
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We report on the fabrication and characterization of an edge-emitting semiconductor laser with a gain medium consisting of two layers of patterned, self-aligned, vertically coupled quantum dots (QDs) using a wet-etching and regrowth technique. A threshold current density of 300 A/cm(2) is demonstrated at 77 K. The presence of emission from QD excited states in both the spontaneous emission and laser spectra indicates 3-D quantum confinement in QDs fabricated using this technique.
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