Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 45, Issue 11, Pages 1396-1403Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2009.2028159
Keywords
Nonlinear relaxation oscillations (ROs); quantum-dot (QD) lasers; turn-on dynamics
Categories
Funding
- Deutsche Forschungsgemeinschaft [Sfb 787]
Ask authors/readers for more resources
We analyze the complex turn-on behavior of semiconductor quantum-dot (QD) lasers in terms of a nonlinear rate equation model for the electron and hole densities in the QDs and the wetting layer, and the photons. A basic ingredient of the model is the nonlinearity of the microscopic carrier-carrier scattering rates. With the framework of detailed balance, we analytically relate the microscopic in-and out-scattering rates. We gain insight into the anomalous nonlinear dynamics of QD lasers by a detailed analysis of various sections of the 5-D phase space, accounting for density-dependent carrier scattering times. We show that the strongly damped relaxation oscillations are characterized by a desynchronization of electron and hole dynamics in the dots. Analytic approximations for the steady-state characteristics are also derived.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available