Field-Plated Lateral β-Ga2O3 Schottky Barrie Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

In this letter, we report on demonstrating high-performance field-plated lateral beta-Ga2O3 Schottky barrier diode (SBD) on a sapphire substrate with a reverse blocking voltage of more than 3 kV and a low dc specific ON-resistance (R-ON,R-sp) of 24.3 m Omega.cm(2) at an anode-cathode spacing (L-AC) of 24 mu m. To the best of our knowledge, this lateral breakdown voltage (BV) >3 kV with dc power figure-of-merit (FOM) >370 MW/cm(2) is the highest BV achieved among all the beta-Ga2O3 SBDs. Meanwhile, lateral beta-Ga2O3 SBD with L-AC = 16 mu m also demonstrates a high BV of 2.25 kV and low R-ON,R-sp = 10.2 m Omega.cm(2), yielding a record high dc power FOM of 500 MW/cm(2). Combining with 10(9) high-current ON/OFF ratio, 1.15-eV Schottky barrier height and 1.25 ideality factor, beta-Ga2O3 SBD with field-plate structure shows its great promise for power electronics applications.