Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 10, Pages 1500-1503Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2018.2865776
Keywords
Nonvolatile memory; resistive RAM; thin film devices; correlated oxide memory
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Funding
- ARO [W911NF-16-1-0289]
- AFOSR [FA9550-16-1-0159]
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We demonstrate correlated oxide memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, R = Sm, Nd) that undergo filling-controlled phase transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam lithography is observed. The state switching speed reported here are similar to 300x greater than what has been noted with proton-driven resistance switching to date. The ionic-electronic correlated oxide memory devices also exhibit multi-state non-volatile switching. The results are of relevance to use of quantum materials in emerging memory and neuromorphic computing.
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