Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 3, Pages 312-314Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2296659
Keywords
AlGaN/GaN HEMT; MISHEMT; ALD; normally-off; E-mode; interface fixed charges; electron mobility; remote impurity scattering; oxygen plasma; post-metallization anneal (PMA)
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Funding
- Office of Naval Research DEFINE MURI program [ONR N00014-10-1-0937]
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We demonstrate an efficient approach to engineer the dielectric/AlGaN positive interface fixed charges by oxygen plasma and post-metallization anneal. Significant suppression of interface fixed charges from 2 x 10(13) to 8 x 10(12) cm(-2) was observed. Experimental and theoretical electron mobility characteristics and the impact of remote impurity scattering were investigated. The reduction in oxide/semiconductor interface charge density leads to an increase of electron mobility, and enables a positive threshold voltage.
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