Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 9, Pages 894-896Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2336592
Keywords
4H-SiC MOSFET; antimony; mobility; counter-doping
Categories
Funding
- U.S. Army Research Laboratory [W911NF-07-2-0046]
- U.S. National Science Foundation
- II-VI Foundation Block-Gift Program
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0907385] Funding Source: National Science Foundation
- Div Of Industrial Innovation & Partnersh
- Directorate For Engineering [1318249] Funding Source: National Science Foundation
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Channel mobility of > 100 cm(2)V(-1)s(-1) has been obtained on enhancement mode 4H-SiC MOSFETs using an antimony (Sb) doped surface channel in conjunction with nitric oxide (NO) postoxidation annealing. Temperature dependence of the channel mobility indicates that Sb, being an n-type dopant, reduces the surface electric field while the NO anneal reduces the interface trap density, thereby improving the channel mobility. This letter highlights the importance of semiconductor/dielectric materials processes that reduce the transverse surface electric field for improved channel mobility in 4H-SiC MOSFETs.
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