High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric

In this letter, we report a solution-processed hafnium indium zinc oxide (HIZO) thin-film transistors (TFTs) with an Al-doped ZrO2 (AZO) gate dielectric. The AZO thin films were identified as an amorphous phase up to the annealing temperature of 600 degrees C and had a smooth surface with root-mean-square roughness of <0.35 nm. The relative dielectric constant of AZO thin film annealed at 400 degrees C is 19.67. And HIZO TFTs with AZO gate oxide exhibited a high saturation field-effect mobility of 18.1 cm(2)/Vs, a small subthreshold swing of 0.4 V/decade, and a high ON/OFF ratio of 10(7), which can satisfy the backplate requirements for flat panel displays.