Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 2, Pages 208-210Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2292113
Keywords
Resistive switching; nanobattery; non-equilibrium states; retention; endurance
Categories
Funding
- Deutsche Forschungsgemeinschaft [SFB 917, LI 2416/1-1]
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The impact of the recently discovered nanobattery effect on the switching, the endurance, and the retention of resistive random access memory devices is demonstrated. We show that the relaxation of the electromotive force voltage may lead to a shift of the resistance level for high resistive states, which is included into device modeling. Based on the extended memristive device model, which accounts for the nanobattery effects, endurance and retention problems can be explained.
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