Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 10, Pages 995-997Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2343233
Keywords
AlGaN/GaN-on-Si; power density; PAE; X-band; amplifier
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Funding
- Nano Material Technology Development Program through National Research Foundation of Korea (NRF) - Korean government (MEST) [2012M3A7B4035145]
- Brain Korea 21 Plus Project
- National Research Foundation of Korea [2012M3A7B4035145] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A 29.4-W X-band high-power amplifier has been substantialized using GaN on high-resistive silicon substrate. The developed GaN high electron mobility transistor (HEMT) with 3.6-mm gate periphery provides 29.4-W output power and 8-dB small signal gain at 8 GHz with power added efficiency of 39.4% under pulse condition at a duty of 10% with a pulsewidth 100 mu s. Load-pull measurement at 8 GHz demonstrates an output power density of 8.1 W/mm. To the best of our knowledge, the presented amplifier exhibits the highest power density, delivering > 10 W of output power in X-band for GaN HEMTs technology on silicon substrate.
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