Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 12, Pages 1257-1259Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2362143
Keywords
Lateral coupling; electric-double-layer; thin-film transistors
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Funding
- Zhejiang Provincial Natural Science Foundation of China [LR13F040001, LY14A040009]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
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Laterally coupled indium-zinc-oxide electric-double-layer (EDL) transistors gated by solution-processed sodium alginate electrolyte films are self-assembled on glass substrates. Due to the strong EDL effect, a low-operation voltage of 1.5 V, a high-current ON/OFF ratio of similar to 3.1 x 10(6) and a high-electron mobility of similar to 8.8 cm(2)/V s are obtained. Furthermore, AND logic operation is demonstrated when two in-plane gate electrodes are used as the input terminals. Such low-voltage laterally coupled oxide EDL transistors have potential applications in portable biosensors and synaptic electronics.
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