Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 12, Pages 1284-1286Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2361674
Keywords
Silicon carbide; power MOSFET; aging test; reliability; failure mechanism; switching; oxide degradation
Categories
Funding
- Thales Microelectronics, Etrelles, France
- WIDE-Laboratory
- Spanish Ministry of Economy and Competitiveness
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Under realistic switching conditions, SiC MOSFETs reliability issues remain as a challenge that requires further investigation. In this letter, a specific aging test has been developed to monitor and characterize the electrical parameters of the SiC MOSFET. This allows estimations of the health state and predictions of the remaining lifetime prior to its failure. The gate leakage current seems to be a relevant runaway parameter just before failure. This leakage indicates deterioration of the gate structure. This hypothesis has been validated through analysis of scanning electron microscopy pictures, with a focused ion beam cut showing cracks within the polysilicon.
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