Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 2, Pages 214-216Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2295592
Keywords
ReRAM; lightning-rod effect; triple layer structure; ON/OFF ratio; variability
Categories
Funding
- Future Semiconductor Device Technology Development Program [10045226]
- MOTIE(Ministry of Trade, Industry Energy)
- KSRC(Korea Semiconductor Research Consortium)
- Pioneer Research Center Program through the National Research Foundation of Korea
- Ministry of Science, ICT & Future Planning [2012-0009460]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10045226] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2012-0009461] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
For uniform switching of resistive random access memory, narrower physical switching gap between an electrode and remained conducting filament can be an effective method, which also leads to degradation of ON/OFF ratio. To overcome a trade-off between the switching uniformity and the ON/OFF ratio, an additional layer was intentionally inserted. Consequently, improved uniformity of switching parameters was achieved without degradation of the ON/OFF ratio.
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