Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 10, Pages 1013-1015Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2345631
Keywords
NCD; load-pull; amplifier; reliability
Categories
Funding
- Office of Naval Research
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In this split-wafer study, we have compared the dc, pulsed, small and large signal RF electrical performance of nanocrystalline diamond (NCD) coated AlGaN/GaN high electron mobility transistors (HEMTs) to reference devices with silicon nitride passivation only. The NCD-coated HEMTs were observed to outperform reference devices in transconductance, large-signal gain, output power density, and power-added efficiency at 4 GHz. The measured improvements were suspected to be related to reduced dispersion and lower source access resistance afforded by the NCD film.
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