Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 12, Pages 1218-1220Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2364622
Keywords
Double heterojunction bipolar transistors (DHBTs); InP/GaAsSb; maximum oscillation frequency (f(MAX)); millimeter-wave transistors
Categories
Funding
- ETH Independent Investigators' Research Awards [16-11-1]
Ask authors/readers for more resources
We report InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with simultaneous current and power gain cutoff frequencies of f(T)/f(MAX) = 503/780 GHz. Devices with a 0.2 x 4.4 mu m(2) emitter area feature a peak DC current gain beta = 17 and a common-emitter breakdown voltage BVCEO = 4.1 V. To the best of our knowledge, the present transistors are the first GaAsSb-based DHBTs to feature f(MAX) > 750 GHz. The progress in RF performance is enabled by a reduction of the base access resistance and base-collector capacitance achieved via an improved self-aligned emitter etching procedure.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available