Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 2, Pages 169-171Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2294869
Keywords
GaN; CVLED; diamond-like carbon
Categories
Funding
- National Science Council of Taiwan [NSC 102-2218-E-005-001, NSC 100-2221-E-005-092-MY3, NSC 101-3113-E-005-002-CC2]
- Taichung and South Taiwan Science Park [100 RB04, 102C106]
- Ministry of Economic Affairs [100-EC-17-A-07-S1-158, 102-E0605]
- Industrial Technology Research Institute [102-B-03]
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Performance in heat dissipation of Cu-plating type vertical GaN light-emitting diodes (CVLEDs) with a diamond like carbon (DLC) layer was investigated at various injection current levels. Through the incorporation of DLC, the CVLED with DLC exhibits a high heat dissipating ability, where the DLC-CVLEDs can be handled at an ultrahigh injection current of 2000 mA and reach an output power of 620 mW. In addition, the thermal resistance of the CVLED with DLC calculated by surface temperature data at 1400 mA injection current was 34% lower than that of CVLED without DLC, which clearly indicated that the benefit of using DLC layer on improvement of heat dissipation will be more significant as a higher current is injected.
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