Drain-Induced Barrier Lowering and Parasitic Resistance Induced Instabilities in Short-Channel InSnZnO TFTs

Effect of short-channel induced instabilities in InSnZnO-based thin-film transistors (TFTs) caused by combination of the drain induced barrier lowering (DIBL) and parasitic resistance is reported. As the active channel length decreased below a critical value of around 8 mu m, the drain-current (2.81 mu A) are abruptly increased and N-shaped behavior of the transconductance are observed due to the formation of additional current path in the channel. The magnitude of subgap density of states is also depended on the channel size. The higher value of parasitic resistance RSD (similar to 42 k Omega) and DIBL coefficient (76.8 mV/V) in short-channel ITZO TFT devices are also discussed.