Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 1, Pages 78-80Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2289877
Keywords
Amorphous IGZO thin film transistor; drain current model; surface potential
Categories
Funding
- National Natural Science Foundation of China [61204100]
- Guangdong Natural Science Foundation [S2013010013088]
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A compact drain current model of amorphous In-Ga-Zn-O thin-film transistors based on terms of surface potential is presented in this letter. An explicit and closed-form scheme for the surface potential calculation is developed by including both exponential deep and tail states. With the effective charge density approach, the resulting dc and surface potential models give accurate descriptions with single-piece formulas, which are suitable for CAD applications. The proposed models are verified by both the numerical simulation and experimental result, and a good agreement is achieved over a wide range of operation regions.
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