Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 1, Pages 24-26Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2290299
Keywords
GaAsSb; DHBT; doping graded; InP; millimeter-wave
Categories
Ask authors/readers for more resources
A type-II GaAsSb Double Heterojunction Bipolar Transistor (DHBT) with an AlInP emitter, doping-graded GaAsSb base, and InP collector has been grown by molecular beam epitaxy. The 0.38 mu m emitter devices have been fabricated by a triple-mesa wet etch process and demonstrated f(T)/f(MAX) = 470/540 GHz at J(C) = 5.1 mA/mu m(2) and V-CB = 0.65 V. This performance is comparable with composition-graded base devices with similar emitter width.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available