Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 12, Pages 1206-1208Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2362815
Keywords
Silicon carbide; integrated circuits; high temperature electronics
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Funding
- U.S. Department of Energy [DE-EE0002755]
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In this letter, silicon carbide MOSFET-based integrated circuits have been designed, fabricated, and successfully tested from -193 degrees C (80 K) to 500 degrees C. Silicon carbide single MOSFETs remained fully operational over a 700-degrees C wide temperature range and exhibited stable I-V characteristics. The circuits that include operational amplifier (op-amp), 27-stage ring oscillator, and buffer were tested and shown to be functional up to 500 degrees C with relatively small performance variation between 300 degrees C and 500 degrees C. High-temperature evaluation of these circuits confirmed stable operation and survivability of both the ring oscillator and op-amp for more than 100 h at 500 degrees C.
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