Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 10, Pages 1055-1057Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2344105
Keywords
Non-volatile memory; resistive switching; threshold switching; niobium oxide; cross-point memory
Categories
Funding
- Australian Research Council
- Australian Government's NCRIS Program
- Australian Government's EIF Program
Ask authors/readers for more resources
The leakage current scaling issues for NbO2 selector devices are investigated. By introducing a rough Pt bottom electrode (BE) (RMS roughness similar to 2.5 nm) and inserting a 20-nm-thick dielectric layer (Nb2O5 and HfO2) between the BE and NbO2 layer, we show that the threshold current for the insulator-metal-transition in microscale devices (similar to 150 mu m) can be reduced to similar to 20 mu A, close to that realized in nanoscale (similar to 10 nm) 3-D vertical ReRAM. This could be attributed to a thermal confinement effect caused by the presence of a permanent conductive filament in dielectric layer. The experimental results are supported by finite element simulation.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available