Journal
IEEE ELECTRON DEVICE LETTERS
Volume 35, Issue 4, Pages 428-430Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2014.2303395
Keywords
Bipolar junction transistor (BJT); silicon carbide (SiC); complementary bipolar; lateral PNP transistor; current gain temperature dependence; high and low temperature
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Lateral p-n-p transistors and a complementary bipolar technology have been demonstrated for analog integrated circuits. Besides vertical n-p-n's, this technology provides lateral p-n-p's at the cost of one additional lithographic and dry etching step. Both devices share the same epitaxial layers and feature topside contacts to all terminals. The influence on p-n-p current gain of contact topology (circular versus rectangular), effective base width, base/emitter doping ratio, and temperature was studied in detail. In the range -40 degrees C to 300 degrees C, the current gain of the p-n-p transistor shows a maximum of similar to 37 around 0 degrees C and decreases to similar to 8 at 300 degrees C, whereas in the same range, the gain of n-p-n transistors exhibits a negative temperature coefficient.
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