Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 1, Pages 63-65Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2223654
Keywords
Bias stress; indium-gallium-zinc-oxide (IGZO); self-heating effect; thin-film transistors (TFTs)
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Funding
- National Science Council of Taiwan [NSC 100-2120-M-110-003]
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This letter investigates degradation behaviors induced by the self-heating effect for amorphous indium-gallium-zinc-oxide (IGZO) (a-IGZO) thin-film transistors (TFTs). Both the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer itself cause the self-heating effect in a-IGZO TFTs. The heated channel layer enhances threshold voltage shift, and the evolution of threshold voltage shift is found to be dominated by charge-trapping effect. Further verifications indicate that the degree of threshold voltage shift is dependent on stress power only, and a wider channel leads to more severe self-heating effect.
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