Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 9, Pages 1181-1183Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2272631
Keywords
Activation energy of traps; resistive random access memories (RRAM); resistive switching; silicon nitride; work function difference
Categories
Funding
- National Research Foundation of Korea
- Korean government [2011-0028769]
- National Research Foundation of Korea [2011-0028769] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this letter, the effect of the work function difference between various top electrodes (TE-Ni, W, Ti, and Al) and the Pt bottom electrode, Delta Phi(M), on the resistive switching (RS) of SiN thin films was investigated. The cells with W and Ti TEs showed stable RS, but others failed to show RS. In particular, the Ti TE exhibited low operating currents (similar to 2 mu A) and good retention properties (< similar to 10(4) s at 85 degrees C). On the basis of the analysis of conduction mechanisms, it is found that stable RS of SiN films might be strongly related to the activation energy of traps induced by Delta Phi(M). Thus, the RS properties of the SiN films can be improved by engineering Delta Phi(M) without additional processes.
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