Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 2, Pages 214-216Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2235403
Keywords
AlGaN/GaN-on-Si; breakdown voltage; gated ohmic anode; rectifier; turn-on voltage
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Funding
- National Research Foundation of Korea (NRF) [20120002507, 2012042153]
- Nano Material Technology Development Program through NRF [2012035274]
- Ministry of Education, Science, and Technology
- National Research Foundation of Korea [2012M3A7B4035274, 2012R1A1A2042153] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In comparison with conventional Schottky diodes, the forward current at 1.5 V was increased by 2 to 3 times, whereas no breakdown-voltage degradation was observed. The proposed rectifier with an anode-to-cathode distance of 18 mu m exhibited a turn-on voltage of 0.37 V, a forward current density of 92 mA/mm at 1.5 V, and a breakdown voltage of 1440 V.
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