Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 9, Pages 1157-1159Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2272311
Keywords
Flexible thin-film transistor (TFT); In-Ga-Zn-O thin-film transistor (IGZO TFT); postannealing
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Funding
- National Science Council of Taiwan [NSC 100-2628-E-009-016-MY3]
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In this letter, microwave annealing technology is proposed to reduce thermal budget for the manufacture of transparent conductive oxide thin-film transistor (TFT). With microwave annealing, a nitrogenated amorphous In-Ga-Zn-O (a-IGZO:N) TFT fabricated on glass panel behaves as a carrier mobility of 4.21 cm(2)/V s and threshold voltage of 2.91 V. The performance of microwave-treated a-IGZO: N TFT with annealing process duration of 300 s is well competitive with its counterpart treated by thermal furnace annealing at 350 C for 1 h. Owing to its low thermal budget and selective heating to materials of interest, the microwave annealing has great potential for flexible oxide TFT applications.
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