Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 11, Pages 1391-1393Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2279940
Keywords
Amorphous indium-gallium-zinc oxide (a-IGZO); analog circuit design; device modeling; flexible electronics; thin-film transistors (TFTs)
Categories
Funding
- European Commission under project FLEXIBILITY [287568]
- German Research Foundation within the Cluster of Excellence Center for Advancing Electronics Dresden-Organic Path
Ask authors/readers for more resources
This letter presents a compact model for flexible analog/RF circuits design with amorphous indium-gallium-zinc oxide thin-film transistors (TFTs). The model is based on the MOSFET LEVEL = 3 SPICE model template, where parameters are fitted to measurements for both dc and ac characteristics. The proposed TFT compact model shows good scalability of the drain current for device channel lengths ranging from 50 to 3.6 mu m. The compact model is validated by comparing measurements and simulations of various TFT amplifier circuits. These include a two-stage cascode amplifier showing 10 dB of voltage gain and 2.9 MHz of bandwidth.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
