Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 1, Pages 81-83Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2223653
Keywords
Nickel oxide (NiO) thin film; optical device; p-n junction; UV photodetector
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Funding
- DST, Government of India
- CSIR
- University of Delhi
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The development of a short-wavelength p-n junction device is essentially important for the realization of transparent electronics for next-generation optoelectronics. Nickel oxide (NiO) thin films with a tunable electrical conductivity of both p-type and n-type under the optimized growth conditions using RF sputtering technique with high optical transmission in the visible region have been fabricated. The room-temperature conductivities for n-type and p-type NiO thin films were about 5.91 x 10(1) and 1.9 x 10(-2) S . cm(-1), respectively. A p-n junction of NiO thin film has been realized, successfully exhibiting good rectifying behavior with efficient UV photodiode characteristics, providing suitable solution for low-cost visible blind UV photodetector application.
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