Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 12, Pages 1572-1574Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2283305
Keywords
LiNbO3 thin film; radio frequency; surface acoustic wave (SAW); temperature compensation
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Funding
- National Natural Science Foundation [61025021, 60936002, 61020106006]
- National Key Project of Science and Technology of China [2011ZX02403-002]
- University Grant Council of the Government of HKSAR [AoE/P-04/08]
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We report high-frequency surface acoustic wave (SAW) devices with excellent temperature stability using a layered structure consisting of single-crystal LiNbO3 thin film on SiO2/LiNbO3 substrate. SAW devices with a wavelength of 2 mu m have been fabricated and several wave modes ranging from similar to 1.5 to 2.1 GHz have been obtained. With the SiO2 interlayer providing the temperature compensation and the top single-crystal Z-cut LiNbO3 piezoelectric thin film for acoustic wave excitation, the fabricated SAW devices exhibit excellent temperature coefficients of frequency. Theoretical calculations are presented to elucidate temperature compensation of the proposed layered structure.
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