MIM Capacitors Based on ZrTiOx/BaZryTi1-yO3 Featuring Record-Low VCC and Excellent Reliability

Perovskite-based BaZryTi1-yO3 (BZTO) (y = 0.6) with partial crystallization has been found to possess a rather high-kappa value of 48.6 and positive quadratic voltage coefficient of capacitance (VCC). Through stacking BZTO and ZrTiOx as laminate dielectric, metal-insulator-metal capacitors using VCC canceling effect advance frontiers by exhibiting a record-low VCC of 14 ppm/V-2 at the capacitance of 13.4 fF/mu m(2), low dielectric loss tangent <0.01, and low leakage current of 7.5 x 10(-9) A/cm(2) at -1 V. With constant voltage stress at 2.5 V for 1000 s, degradation in leakage current <30% is observed. In addition, excellent reliability of 0.89% capacitance change against stress up to a projected of 10 years is also achieved. The aforementioned characteristics not only compare favorably to other high-kappa-based dielectrics, most importantly, but also these results meet ITRS requirements set by 2024.