Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 10, Pages 1319-1321Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2276618
Keywords
Al doped ZnO; surface acoustic wave; transparent devices
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Funding
- National Natural Science Foundation of China [61171038, 61204124, 61274037]
- Zhejiang Province Natural Science Fund Key Project [J20110271]
- Zhejiang Provincial Natural Science Foundation of China [LQ12F01007, Z11101168]
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This letter reports the design of transparent surface acoustic wave (SAW) resonators using aluminum-doped ZnO (AZO) as the transparent electrode on ZnO/glass substrates. SAW devices with a resonant frequency up to 204.4 MHz and signal amplitude up to 25 dB were obtained with transparency above 80%. An AZO layer of more than 250 nm is needed to minimize the series resistance of the electrode to achieve reasonable performance. Temperature sensing showed that they have a temperature coefficient of frequency of similar to 50 ppm/K. This demonstrates the great potential of transparent SAW devices for widespread applications, as such devices are one the of building blocks of electronics, sensors, and microsystems.
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