Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 9, Pages 1169-1171Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2273351
Keywords
Gallium nitride (GaN); heterojunction; ultraviolet photodetector; zinc oxide (ZnO) nanowires
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Funding
- National Security Technologies through National Science Foundation (NSF) Industry/University Cooperative Research Center Connection One
- NSF Smart Lighting Engineering Research Center [EEC-0812056]
- NSF [DMR 1151028]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1151028] Funding Source: National Science Foundation
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An ultraviolet (UV) heterojunction photodetector was fabricated from multiwalled carbon nanotubes (MWCNTs)/zinc-oxide nanowires (NWs)/p-GaN composite structure. The photodetector demonstrated significant rectifying characteristics and relative fast transient response with response time on the order of milliseconds. Under back illumination, the photodetector exhibited a narrow bandpass photoresponse spectrum (13-nm full-width at half-maximum) centered at 375 nm with a maximum responsivity of 6 mA/W. The good performance of this heterojunction photodetector is attributed to improved carrier transport and collection efficiency through the MWCNTs network deposited on top of the ZnO NWs.
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