Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 5, Pages 680-682Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2251602
Keywords
Device physics; dielectric breakdown; HfO2; oxygen vacancies; random access memory (RRAM); resistive switching memories; stoichiometry; time-dependent dielectric breakdown (TDDB); trap-assisted tunneling
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We combine experiments and simulations to investigate leakage current and breakdown (BD) in stoichiometric and sub-stoichiometric hafnium oxides. Using charge-transport simulations based on phonon-assisted carrier tunneling between trap sites, we demonstrate that higher currents generally observed in HfOx are due to a higher density of the as-grown oxygen vacancy defects assisting the charge transport. Reduction of the dielectric BD field (E-BD) in HfOx is explained by the lower zero-field activation energy (E-A,E- G) of the defect generation process, as extracted from time-dependent dielectric BD experiments.
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