Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 12, Pages 1515-1517Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2284916
Keywords
Defect engineering; reliability; resistive switching; retention
Categories
Funding
- POSTECH-Samsung Electronics ReRAM Cluster Research
- Research and Development Program of the Ministry of Knowledge Economy
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The effects of stack and defect engineering of metal-oxide layers on resistive switching uniformity were investigated to obtain resistive random access memory (ReRAM) with excellent switching reliability. Uniform switching, parameters, such as set voltage (V-set), reset voltage (V-reset), low-resistance state, high-resistance state, and retention characteristics, were significantly improved by stack and defect engineering. Furthermore, the initial forming operation, which is a nuisance, was removed to realize cross-point ReRAM.
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