Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 8, Pages 975-977Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2265351
Keywords
AlGaN/GaN; AlSiC precoverage layer; compressive stress; crack free; subthreshold slope
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Funding
- Kyungpook National University
- National Research Foundation of Korea [2012-0005671]
- National Research Foundation of Korea [2011-0016222, R33-2012-000-10055-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A crack-free AlGaN/GaN heterostrucure is grown on 4-in Si (111) substrate with AlSiC precoverage layer. Covering the Si surface with the AlSiC layer, until the growth of the AlN wetting buffer layer, is found to be effective in compensating the strong tensile stress in the GaN layer grown on Si substrate. The metal-oxide-semiconductor field-effect transistor, fabricated on this AlGaN/GaN heterostructure, exhibits excellent normally-off characteristics with threshold voltage of 7.2 V, maximum drain current of 120 mA/mm, ON/OFF current ratio of similar to 10(8), and subthreshold slope of 80 mV/decade.
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