Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 8, Pages 987-989Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2262918
Keywords
Embedded memory; nanoelectro-mechanical systems (NEMS); nonvolatile memory (NVM); one-time programmable (OTP); tantalum nitride (TaN)
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Funding
- Science and Engineering Research Council, Agency for Science, Technology and Research, Singapore [1021650088, 1021010022]
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Embedded nonvolatile memory (NVM) integrated in the back-end of line processes are of high interest, particularly for rugged environments (high temperature/radiation or vibration). This letter demonstrates the use of tantalum nitride microbeams as antifuse one-time programmable (OTP) NVM. It needs a single mask process and can be integrated above an integrated circuit. Typical fusing current is 1 mA, operating voltage is 4 V, and the measured contact resistance is <2 k Omega. A hybrid one-transistor/one microbeam/bit memory array is proposed for back-end compatible and low-cost OTP NVM integration.
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