Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 11, Pages 1370-1372Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2279844
Keywords
AlGaN/GaN; high-k; MOSFET; normally-off; recess
Categories
Funding
- National Natural Science Foundation of China [61204099]
- National Science and Technology Major Project 02 [2013ZX02308-003]
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This letter reports a normally-OFF Al2O3/GaN gate-recessed MOSFET using a low-damage digital recess technique featuring multiple cycles of plasma oxidation and wet oxide removal process. The wet etching process eliminates the damage induced by plasma bombardment induced in conventional inductively coupled plasma dry etching process so that good surface morphology and high interface quality could be achieved. The fully recessed Al2O3/GaN MOSFET delivers true enhancement-mode operation with a threshold voltage of +1.7 V. The maximum output current density is 528 mA/mm at a positive gate bias of 8 V. A peak field-effect mobility of 251 cm(2)/V.s is obtained, indicating high-quality Al2O3/GaN interface.
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