Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 3, Pages 375-377Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2237499
Keywords
AlGaN-GaN; metal-insulator-semiconductor (MIS); oxynitride; TaOxNy
Categories
Ask authors/readers for more resources
We investigated AlGaN-GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with high-permittivity (high-k) oxynitride TaOxNy gate dielectric (k similar to 24) obtained by sputtering deposition. The MIS-HEMTs show excellent pulsed current-voltage characteristics, small off-leakage currents (<10(-10) A/mm), high on/off current ratios (> 10(10)), and favorable threshold voltage stabilities. From comparisons with MIS-HEMTs with TaOx gate dielectric, we conclude that N incorporation in gate dielectric can suppress current collapse and deep-level states.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available