Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 7, Pages 894-896Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2259574
Keywords
High mobility; indium zinc oxide semiconductor; oxygen vacancy; photo-bias stability; thin-film transistors (TFTs)
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Funding
- MKE/KEIT [10041808]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10035225] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This letter examines the effect of oxygen (O-2) high-pressure annealing (HPA) on indium zinc oxide (IZO) thin-film transistors (TFTs) with a high-quality Al2O3 passivation layer. The IZO TFTs anneal under an O-2 atmosphere at 9 atm exhibits a high field-effect mobility, low subthreshold gate swing, moderate threshold voltage (Vth), and high I-ON/OFF ratio of 30.4 cm(2)/Vs, 0.10 V/decade, 0.79 V, and 10(8), respectively. In addition, the O-2 HPA-treated IZO TFT has superior reliability (Delta Vth= -0.5 V) to that of the 0.2-atm-annealed device (Delta Vth= -3.7 V) under negative bias illumination stress conditions. This improvement can be attributed to the reduced concentration of oxygen vacancy defects in the IZO channel layer during the O-2 HPA treatment.
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