Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 1, Pages 99-101Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2224088
Keywords
BST; capacitors; embedded; thin films
Categories
Funding
- Fundamental R&D Program for Core Technology of Materials
- Ministry of Knowledge Economy, Republic of Korea
- Korea Institute of Science and Technology [2E22731]
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The single-layer 400 mu m x 200 mu m sized Ba0.6Sr0.4TiO3 thin-film embedded chip capacitors with two external electrodes fabricated on the surface of the chip capacitors have been demonstrated. The structure of the external electrodes placed on the same surface allows the reduction of connection length, resulting in low parasitic loss and noise of elecronic devices. The fabricated chip capacitors exhibited excellent electrical properties such as high capacitance density and dielectric constant (1687 nF/cm(2) and 452) and a low dielectric loss of 0.052 at 1 kHz, respectively. In addition, the chip capacitors exhibited the superior temperature stability of X5R (Delta C/C = +/- 15% at -55 degrees C to +85 degrees C) characteristics. Such a low leakage current density of similar to 0.15 mu A/cm(2) at 3 V and a high breakdown voltage of 19.75 V were obtained as well. In conclusion, the chip capacitors are suggested as a candidate for the applications of embedded passive components.
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