Self-Aligned Indium-Gallium-Zinc Oxide Thin-Film Transistor With Source/Drain Regions Doped by Implanted Arsenic

Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with source/drain (S/D) regions doped by implanted arsenic are developed in this letter. The resulting a-IGZO TFTs exhibit much better thermal stability than those with S/D regions doped by hydrogen or argon plasma. They also show good electrical performance, including field-effect mobility of 12 cm(2)/V . s, threshold voltage of 3.5 V, subthreshold swing of 0.5 V/dec, and ON/OFF current ratio of 9 x 10(7).