Journal
IEEE ELECTRON DEVICE LETTERS
Volume 34, Issue 1, Pages 126-128Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2226556
Keywords
Complimentary circuit; dielectric materials; inkjet; organic field-effect transistor (OFET); printed electronics
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Funding
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science and Technology, Korea [2011-0031639]
- National Research Foundation of Korea [2011-0031639] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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High-performance inkjet-printed top-gate/bottom-contact organic field-effect transistors (OFETs) and complementary electronic circuitry are reported. Blends of poly (vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly (methyl methacrylate) (PMMA) dielectrics effectively reduce the operation voltage. At the optimized blend ratio of 7:3 wt.% for P(VDF-TrFE) and PMMA, both p- and n-type printed OFETs show well-balanced high field-effect mobility values (similar to 0.5 cm(2)/V . s) and low threshold voltages (+/- 5 V). The high-performance inverters and various digital logic gates such as NAND, NOR, OR, and XOR are demonstrated on flexible plastic substrates. The inverter shows a high gain (> 25), an ideal inverting voltage near half of the supplied bias (1/2V(DD)), and a high noise immunity (up to 79% of 1/2V(DD)).
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