Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 3, Pages 420-422Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2177804
Keywords
Carbon nanotubes (CNTs); densification; interconnects; through-silicon vias (TSVs); transfer
Categories
Funding
- EU
- Swedish National Science Foundation (VR) [2009-5042]
- Swedish Foundation for Strategic Research (SSF)
- Chinese Ministry of Science and Technology [2010DFA14450]
- Sustainable Production Initiative and the Production Area of Advance at Chalmers
Ask authors/readers for more resources
Through-silicon vias (TSVs) filled with densified and transferred carbon nanotube (CNT) forests are experimentally demonstrated. The filling is achieved by a postgrowth low-temperature transfer process at 200 degrees C instead of direct CNT growth in the vias normally requiring high temperature. A vapor densification method is also applied to densify the as-grown CNT forests, which allows for packing more CNTs in the vias to reduce their resistances. CNT-filled TSVs fabricated based on these two key steps show CMOS compatibility and roughly one order of magnitude reduction in resistivity compared to the TSVs filled with as-grown undensified CNT forests.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available