A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi Electrode

In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (> 10(3) at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (> 10(2)) and good retention characteristics (> 10(5) s at 125 degrees C); and 4) wide readout margin for high-density cross-point memory devices (number of word lines > 10(6) for the worst case condition).