Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 4, Pages 546-548Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2184520
Keywords
Atomic layer deposition; MOSFET; MoS2
Categories
Funding
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1120577] Funding Source: National Science Foundation
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We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as the gate dielectric. Our C-V study of MOSFET structures shows good interface between 2-D MoS2 crystal and ALD Al2O3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, at V-ds = 2 V with a channel width of 3 mu m, a channel length of 9 mu m, and a top-gate length of 3 mu m. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm(2)/V.s. The highest current on/off ratio is over 10(8).
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