Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 4, Pages 552-554Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2185774
Keywords
Al2O3; atmospheric pressure plasma jet (APPJ); indium-gallium-zinc oxide (IGZO); nonvacuum; plasma-enhanced atomic layer deposition (PE-ALD)
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Funding
- Mechanical and Systems Research Laboratories, Industrial Technology Research Institute
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This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) Al2O3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low V-T of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 cm(2)/(V . s), and a large I-on/I-off ratio of 1 x 10(8).
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