Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 3, Pages 414-416Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2181325
Keywords
Heterojunctions; photodetectors; photovoltaic effects (LPEs); thin films
Categories
Funding
- National Nature Science Foundation [10974135, 60776035]
- National Minister of Education Program for Changjiang Scholars and Innovative Research Team in University (PCSIRT)
Ask authors/readers for more resources
How to obtain a large sensitivity has been a central issue of lateral photovoltaic effects (LPEs) since it had been discovered many decades ago. This work reports a colossal LPE in a nanolayer Ti and TiO2 modulated metal-oxide-semiconductor (MOS) structure of Ti/TiO2/Si. The obtained 169 mV/mm sensitivity in this structure represents currently the highest level compared with previously reported results of 700 mu V/mm-60 mV/mm in any other systems. The results indicate this MOS structure can be used as novel position-sensitive detectors with high sensitivity.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
