Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 10, Pages 1471-1473Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2210020
Keywords
Field-effect transistor (FET); homoepitaxial diamond; hydrogen terminated; RF performance
Categories
Funding
- Engineering and Physical Sciences Research Council [EP/E054668/1]
- Engineering and Physical Sciences Research Council [EP/E054668/1] Funding Source: researchfish
- EPSRC [EP/E054668/1] Funding Source: UKRI
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Homoepitaxial diamond has been used to demonstrate the RF performance of 50-nm gate length hydrogen-terminated diamond field-effect transistors. An extrinsic cutoff frequency of 53 GHz is achieved which we believe to be the highest value reported for a diamond-based transistor. The generation of an RF small signal equivalent circuit is used to extract device elements to better understand variation between intrinsic and extrinsic operation. An intrinsic cutoff frequency of 90 GHz is extracted through this process, verifying the requirement to minimize access resistance to maximize the potential high-frequency performance of this technology.
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