Journal
IEEE ELECTRON DEVICE LETTERS
Volume 33, Issue 5, Pages 685-687Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2188849
Keywords
Indium; lanthanum; thin-film transistors (TFTs); zinc
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Funding
- National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2011-0003537]
- National Research Foundation of Korea [2009-0065794] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We fabricated lanthanum indium zinc oxide (IZO) (La-IZO) thin-film transistors (TFTs) using radio frequency cosputtering of IZO and lanthanum. The field-effect mobility and switching ratio of the La-IZO TFTs were 4.2 cm(2) . V-1 . s(-1) and on the order of 10(8), respectively, before thermal annealing and 3.02 cm(2) . V-1 . s(-1) and on the order of 10(10), respectively, after thermal annealing at 150 degrees C in air. Our La-IZO TFTs had better thermal stability than pure-IZO TFTs due to the stable ionic bond between La and O.
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